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CY7C1381KV33-133AXIT

Description
SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 100-TQFP(14x20)
Categorysemiconductor    memory   
File Size885KB,34 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY7C1381KV33-133AXIT Overview

SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 100-TQFP(14x20)

CY7C1381KV33-133AXIT Parametric

Parameter NameAttribute value
category
MakerCypress Semiconductor
series-
PackageTape and Reel (TR)
memory typeVolatile
memory formatSRAM
technologySRAM - 同步,SDR
storage18Mb(512K x 36)
memory interfacein parallel
Write cycle time - words, pages-
Voltage - Power supply3.135V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing100-LQFP
Supplier device packaging100-TQFP(14x20)
Clock frequency133 MHz
interview time6.5 ns
Basic product numberCY7C1381
CY7C1381KV33/CY7C1381KVE33
CY7C1383KV33/CY7C1383KVE33
18-Mbit (512K × 36/1M × 18)
Flow-Through SRAM (With ECC)
18-Mbit (512K × 36/1M × 18) Flow-Through SRAM (With ECC)
Features
Functional Description
The CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/
CY7C1383KVE33 are a 3.3 V, 512K × 36 and 1M × 18
synchronous flow through SRAMs, designed to interface with
high speed microprocessors with minimum glue logic. Maximum
access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit
on-chip counter captures the first address in a burst and
increments the address automatically for the rest of the burst
access. All synchronous inputs are gated by registers controlled
by a positive edge triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address pipelining
chip enable (CE
1
), depth-expansion chip enables (CE
2
and
CE
3
), burst control inputs (ADSC, ADSP, and ADV), write
enables (BW
x
, and BWE), and global write (GW). Asynchronous
inputs include the output enable (OE) and the ZZ pin.
The CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/
CY7C1383KVE33 allows interleaved or linear burst sequences,
selected by the MODE input pin. A HIGH selects an interleaved
burst sequence, while a LOW selects a linear burst sequence.
Burst accesses can be initiated with the processor address
strobe (ADSP) or the cache controller address strobe (ADSC)
inputs. Address advancement is controlled by the address
advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address strobe
controller (ADSC) are active. Subsequent burst addresses can
be internally generated as controlled by the advance pin (ADV).
CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/
CY7C1383KVE33 operates from a +3.3 V core power supply
while all outputs operate with a +2.5 V or +3.3 V supply. All inputs
and outputs are JEDEC-standard and JESD8-5-compatible.
Supports 133 MHz bus operations
512K × 36 and 1M × 18 common I/O
3.3 V core power supply (V
DD
)
2.5 V or 3.3 V I/O supply (V
DDQ
)
Fast clock-to-output time
6.5 ns (133 MHz version)
Provides high performance 2-1-1-1 access rate
User selectable burst counter supporting interleaved or linear
burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
CY7C1381KV33/CY7C1381KVE33
available
in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free 165-ball
FBGA package. CY7C1383KV33/CY7C1383KVE33 available
in JEDEC-standard Pb-free 100-pin TQFP.
IEEE 1149.1 JTAG-Compatible Boundary Scan
ZZ sleep mode option.
On-chip error correction code (ECC) to reduce soft error rate
(SER)
Selection Guide
Description
Maximum access time
Maximum operating current
× 18
× 36
133 MHz
6.5
129
149
100 MHz
8.5
114
134
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document Number: 001-97888 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 16, 2018
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