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CY15B064J-SXAT

Description
FRAM(铁电体 RAM) 存储器 IC 64Kb I²C 1 MHz 8-SOIC
Categorysemiconductor    memory   
File Size376KB,17 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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CY15B064J-SXAT Overview

FRAM(铁电体 RAM) 存储器 IC 64Kb I²C 1 MHz 8-SOIC

CY15B064J-SXAT Parametric

Parameter NameAttribute value
category
MakerInfineon
seriesAutomotive, AEC-Q100, F-RAM™
PackageTape and Reel (TR)
memory typenon-volatile
memory formatFRAM
technologyFRAM (ferroelectric RAM)
storage64Kb
memory organization8K x 8
memory interfaceI²C
Clock frequency1 MHz
Write cycle time - words, pages-
Voltage - Power supply3V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing8-SOIC (0.154", 3.90mm wide)
Supplier device packaging8-SOIC
Basic product numberCY15B064
CY15B064J
64-Kbit (8K × 8) Serial (I
2
C) Automotive-A
F-RAM
64-Kbit (8K × 8) Serial (I
2
C) Automotive-A F-RAM
Features
Functional Description
The CY15B064J is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the CY15B064J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The CY15B064J
is capable of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the CY15B064J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The CY15B064J provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an automotive-a temperature
range of –40
C
to +85
C.
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100
A
(typ) active current at 100 kHz
3
A
(typ) standby current
Voltage operation: V
DD
= 2.7 V to 3.65 V
Automotive-A temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
13
8Kx8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
A2-A0
Control Logic
Cypress Semiconductor Corporation
Document Number: 002-10221 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 24, 2017

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