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S29GL512T12DHVV23

Description
FLASH - NOR 存储器 IC 512Mb(64M x 8) 并联 120 ns 64-FBGA(9x9)
Categorysemiconductor    memory   
File Size3MB,110 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S29GL512T12DHVV23 Overview

FLASH - NOR 存储器 IC 512Mb(64M x 8) 并联 120 ns 64-FBGA(9x9)

S29GL512T12DHVV23 Parametric

Parameter NameAttribute value
category
MakerCypress Semiconductor
seriesGL-T
PackageTape and Reel (TR)
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage512Mb(64M x 8)
memory interfacein parallel
Write cycle time - words, pages60ns
Voltage - Power supply1.65V ~ 3.6V
Operating temperature-40°C ~ 105°C(TA)
Installation typesurface mount type
Package/casing64-LBGA
Supplier device packaging64-FBGA(9x9)
interview time120 ns
Basic product numberS29GL512

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