EEWORLDEEWORLDEEWORLD

Part Number

Search

MT45W2MW16BGB-701 IT

Description
PSRAM(伪 SRAM) 存储器 IC 32Mb(2M x 16) 并联 70 ns 54-VFBGA(6x8)
Categorysemiconductor    memory   
File Size2MB,61 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT45W2MW16BGB-701 IT Overview

PSRAM(伪 SRAM) 存储器 IC 32Mb(2M x 16) 并联 70 ns 54-VFBGA(6x8)

MT45W2MW16BGB-701 IT Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
Packagetray
memory typeVolatile
memory formatPSRAM
technologyPSRAM (pseudo-SRAM)
storage32Mb(2M x 16)
memory interfacein parallel
Write cycle time - words, pages70ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-40°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing54-VFBGA
Supplier device packaging54-VFBGA(6x8)
interview time70 ns
Basic product numberMT45W2MW16
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Features
Async/Page/Burst
CellularRAM
®
1.0 Memory
MT45W2MW16BGB
Features
• Single device supports asynchronous, page, and
burst operations
• Random access time: 70ns
• V
CC
, V
CC
Q voltages
1.7–1.95V V
CC
1.7–3.6V V
CC
Q
• Page mode read access
16-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Burst mode write access: continuous burst
• Burst mode read access
4, 8, or 16 words or continuous burst
MAX clock rate: 104 MHz (
t
CLK = 9.62ns)
Burst initial latency: 38.5ns (4 clocks) at 104 MHz
t
ACLK: 7ns at 104 MHz
• Low power consumption
Asynchronous read: <20mA
Intrapage read: <15mA
Intrapage read initial access, burst read:
(38.5ns [4 clocks] at 104 MHz) <40mA
Continuous burst read: <25mA
Standby: <110µA
Deep power-down: <10µA (TYP at 25°C)
• Low-power features
Temperature-compensated refresh (TCR)
On-chip temperature sensor
Partial-array refresh (PAR)
Deep power-down (DPD) mode
Figure 1:
54-Ball VFBGA Ball Assignment
1
A
B
C
D
E
F
G
H
J
2
3
4
5
6
LB#
DQ8
DQ9
OE#
UB#
DQ10
A0
A3
A5
A17
NC
A14
A12
A9
ADV#
A1
A4
A6
A7
A16
A15
A13
A10
NC
A2
CE#
DQ1
DQ3
DQ4
DQ5
WE#
A11
NC
CRE
DQ0
DQ2
VCC
VSS
DQ6
DQ7
A20
NC
V
SS
Q DQ11
V
CC
Q DQ12
DQ14 DQ13
DQ15
A18
WAIT
A19
A8
CLK
Top view
(Ball down)
Options (continued)
• Standby power
Standard
• Low power
• Operating temperature range
Wireless (–30°C to +85°C)
Industrial (–40°C to +85°C)
Designator
None
L
WT
1
IT
2
Options
• Configuration
2 Meg x 16
• Package
54-ball VFBGA (“green”)
• Access time
70ns
• Frequency
80 MHz
104 MHz
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_1.fm - Rev. E 9/08 EN
Designator
MT45W2MW16B
GB
-70
8
1
Notes: 1. –30°C exceeds the CellularRAM Workgroup
1.0 specification of –25°C.
2. Contact factory for availability.
Part Number Example:
MT45W2MW16BGB-701WT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
1
Products and specifications discussed herein are subject to change by Micron without notice.

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 764  1888  2612  27  1913  16  39  53  1  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号