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MT25QU512ABB8E12-0AUT

Description
FLASH - NOR 存储器 IC 512Mb(64M x 8) SPI 24-T-PBGA(6x8)
Categorysemiconductor    memory   
File Size1MB,100 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT25QU512ABB8E12-0AUT Overview

FLASH - NOR 存储器 IC 512Mb(64M x 8) SPI 24-T-PBGA(6x8)

MT25QU512ABB8E12-0AUT Parametric

Parameter NameAttribute value
category
MakerMicron Technology
seriesAutomotive, AEC-Q100
Packagetray
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage512Mb(64M x 8)
memory interfaceSPI
Write cycle time - words, pages8ms,2.8ms
Voltage - Power supply1.7V ~ 2V
Operating temperature-40°C ~ 125°C(TA)
Installation typesurface mount type
Package/casing24-TBGA
Supplier device packaging24-T-PBGA(6x8)
Clock frequency133 MHz
Basic product numberMT25QU512
512Mb, 1.8V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
1.8V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase
MT25QU512ABB
Features
• SPI-compatible serial bus interface
• Single and double transfer rate (STR/DTR)
• Clock frequency
– 166 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
• Dual/quad I/O commands for increased through-
put up to 90 MB/s
• Supported protocols in both STR and DTR
– Extended I/O protocol
– Dual I/O protocol
– Quad I/O protocol
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Additional reset pin for selected part numbers
• 3-byte and 4-byte address modes – enable memory
access beyond 128Mb
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
• Erase capability
– Bulk erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BB20h)
– Extended device ID: two additional bytes identify
device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 1.7–2.0V
• Density
– 512Mb
• Device stacking
– Monolithic
• Device generation
• Die revision
• Pin configuration
– HOLD#
– RESET# and HOLD#
• Sector Size
– 64KB
• Packages – JEDEC-standard, RoHS-
compliant
– 24-ball T-PBGA 05/6mm × 8mm
(TBGA24)
– Wafer level chip-scale package, 27
balls, 9 active balls (XFWLBGA 0.5P)
– 16-pin SOP2, 300 mil
(SO16W, SO16-Wide, SOIC-16)
– W-PDFN-8 8mm × 6mm
(MLP8 8mm × 6mm)
• Security features
– Standard security
• Special options
– Standard
– Automotive
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
– From –40°C to +125°C
Marking
U
512
A
B
B
1
8
E
12
56
SF
W9
0
S
A
IT
AT
UT
09005aef864f8d6d
mt25q-qlkt-u512-abb-0.pdf - Rev. F 1/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

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