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BC856B/DG/B4R

Description
晶体管 - 双极 (BJT) - 单 PNP 100MHz 表面贴装型 TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size202KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

BC856B/DG/B4R Overview

晶体管 - 双极 (BJT) - 单 PNP 100MHz 表面贴装型 TO-236AB

BC856B/DG/B4R Parametric

Parameter NameAttribute value
category
MakerNexperia
series-
PackageTape and Reel (TR)
Transistor typePNP
Vce saturation voltage drop (maximum value) when Ib and Ic are different650mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) (minimum value) when different Ic, Vce125 @ 2mA,5V
Frequency - Transition100MHz
Operating temperature150°C(TJ)
Installation typesurface mount type
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingTO-236AB
Current - Collector (Ic) (maximum)100 mA
Voltage - collector-emitter breakdown (maximum)65 V
Power - Max250 mW
Basic product numberBC856
BC856; BC857; BC858
Rev. 7 — 16 April 2018
65 V, 100 mA PNP general-purpose transistors
Product data sheet
1
Product profile
1.1 General description
PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
Package
Nexperia
SOT23
JEDEC
TO-236AB
BC846
BC846A
BC846B
BC847
BC847A
BC847B
BC847C
BC848B
NPN complement
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 65 V)
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
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