MT49H32M18BM-25:B TR datasheet, PDF - EEWORLD Datasheet

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MT49H32M18BM-25:B TR: DescriptionDRAM 存储器 IC 576Mb（32M x 18）并联 400 MHz 20 ns 144-µBGA（18.5x11）; Categorysemiconductor memory; File Size3MB，76 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT49H32M18BM-25:B TR Overview

DRAM 存储器 IC 576Mb（32M x 18）并联 400 MHz 20 ns 144-µBGA（18.5x11）

MT49H32M18BM-25:B TR Parametric

Parameter Name	Attribute value
category
Maker	Micron Technology
series	-
Package	Tape and Reel (TR)
memory type	Volatile
memory format	DRAM
technology	DRAM
storage	576Mb（32M x 18）
memory interface	in parallel
Write cycle time - words, pages	-
Voltage - Power supply	1.7V ~ 1.9V
Operating temperature	0°C ~ 95°C（TC）
Installation type	surface mount type
Package/casing	144-TFBGA
Supplier device packaging	144-µBGA（18.5x11）
Clock frequency	400 MHz
interview time	20 ns
Basic product number	MT49H32M18

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