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MT49H16M18CBM-25 IT:B TR

Description
DRAM 存储器 IC 288Mb(16M x 18) 并联 400 MHz 20 ns 144-µBGA(18.5x11)
Categorysemiconductor    memory   
File Size6MB,74 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT49H16M18CBM-25 IT:B TR Overview

DRAM 存储器 IC 288Mb(16M x 18) 并联 400 MHz 20 ns 144-µBGA(18.5x11)

MT49H16M18CBM-25 IT:B TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR)
memory typeVolatile
memory formatDRAM
technologyDRAM
storage288Mb(16M x 18)
memory interfacein parallel
Write cycle time - words, pages-
Voltage - Power supply1.7V ~ 1.9V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing144-TFBGA
Supplier device packaging144-µBGA(18.5x11)
Clock frequency400 MHz
interview time20 ns
Basic product numberMT49H16M18
288Mb: x18 SIO RLDRAM 2
Features
SIO RLDRAM 2
MT49H16M18C – 16 Meg x 18 x 8 banks
Features
• 533 MHz DDR operation (1.067 Gb/s/pin data rate)
• 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock
frequency)
• Organization
– 16 Meg x 18 separate I/O
– 8 banks
Cyclic bank switching for maximum bandwidth
Reduced cycle time (15ns at 533 MHz)
Nonmultiplexed addresses (address multiplexing
option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time,
and burst sequence length
Balanced READ and WRITE latencies in order to op-
timize data bus utilization
Data mask for WRITE commands
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and
output data clock signals
Data valid signal (QVLD)
32ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32ms)
HSTL I/O (1.5V or 1.8V nominal)
25–60Ω
matched impedance outputs
2.5V V
EXT
, 1.8V V
DD
, 1.5V or 1.8V V
DDQ
I/O
On-die termination (ODT) R
TT
Options
1
Marking
-18
-25E
-25
-33
16M18
None
IT
FM
BM
TR
SJ
:B
• Clock cycle timing
– 1.875ns @
t
RC = 15ns
– 2.5ns @
t
RC = 15ns
– 2.5ns @
t
RC = 20ns
– 3.3ns @
t
RC = 20ns
• Configuration
– 16 Meg x 18
• Operating temperature range
– Commercial (0° to +95°C)
– Industrial (T
C
= –40°C to +95°C; T
A
=
–40°C to +85°C)
• Package
– 144-ball µBGA
– 144-ball µBGA (Pb-free)
– 144-ball FBGA
– 144-ball FBGA (Pb-free)
• Revision
Note:
1. Not all options listed can be combined to
define an offered product. Use the part cat-
alog search on
micron.com
for available of-
ferings.
PDF: 09005aef80a41b59
288Mb_RLDRAM_2_SIO.pdf - Rev. J 10/15 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2015 Micron Technology, Inc. All rights reserved.

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