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MT47H256M8EB-187E:C TR

Description
SDRAM - DDR2 存储器 IC 2Gb(256M x 8) 并联 533 MHz 350 ps 60-FBGA(9x11.5)
Categorysemiconductor    memory   
File Size2MB,141 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT47H256M8EB-187E:C TR Overview

SDRAM - DDR2 存储器 IC 2Gb(256M x 8) 并联 533 MHz 350 ps 60-FBGA(9x11.5)

MT47H256M8EB-187E:C TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR)
memory typeVolatile
memory formatDRAM
technologySDRAM - DDR2
storage2Gb(256M x 8)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.7V ~ 1.9V
Operating temperature0°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing60-TFBGA
Supplier device packaging60-FBGA(9x11.5)
Clock frequency533 MHz
interview time350 ps
Basic product numberMT47H256M8
1Gb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
• Configuration
– 256 Meg x 4 (32 Meg x 4 x 8 banks)
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :H
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :M
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 10mm) Die
Rev :H
– 60-ball FBGA (8mm x 10mm) Die
Rev :M
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :H
• FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 10mm) Die
Rev :H
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Commercial (0°C T
C
+85°C)
2
– Industrial (–40°C T
C
+95°C;
–40°C T
A
+85°C)
• Revision
Notes:
Marking
256M4
128M8
64M16
HR
NF
CF
SH
HW
JN
-187E
-25E
-3
None
L
None
IT
:H / :M
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
2. For extended CT operating temperature see
IDD Table 11 (page 32) Note 7.
CCMTD-1725822587-9658
1GbDDR2.pdf – Rev. AB 09/18 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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