KTC811T-Y datasheet, PDF - EEWORLD Datasheet

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KTC811T-Y: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size46KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC811T-Y Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN

KTC811T-Y Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	30 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

KTC811T

EPITAXIAL PLANAR NPN TRANSISTOR

FEATURES

Excellent h

Linearity

: h

(2)=25(Min.) at V

=6V, I

=400mA.

Complementary to KTA711T.

DIM

MILLIMETERS

2.9 + 0.2

1.6+0.2/-0.1

0.70 + 0.05

0.4 + 0.1

2.8+0.2/-0.3

1.9 + 0.2

0.95

0.16 + 0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

CBO

CEO

EBO

stg

0.8

)

RATING

500

-500

0.9

150

-55 150

UNIT

1. Q

2. Q

3. Q

4. Q

5. Q

6. Q

EMITTER

BASE

COLLECTOR

EMITTER

BASE

COLLECTOR

TS6

EQUIVALENT CIRCUIT (TOP VIEW)

* Package mounted on a ceramic board (600

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

(1) Classification

(2) Classification

0:70 140,

0:25Min.,

Y:120

SYMBOL

CBO

EBO

(1) (Note)

(2) (Note)

CE(sat)

240

Y:40Min.

TEST CONDITION

=35V, I

=5V, I

=1V, I

=100mA

=6V, I

=400mA

=100mA, I

=10mA

=1V, I

=100mA

=6V, I

=20mA

=6V, I

=0, f=1MHz

MIN.

TYP.

0.1

0.8

300

7.0

MAX.

0.1

240

0.25

1.0

UNIT

MHz

Marking

Rank

Type Name

Lot No.

2001. 6. 27

Revision No : 0

1/2

KTC811T-Y Related Products

	KTC811T-Y	KTC811T-O
Description	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN
Maker	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40	25
JESD-30 code	R-PDSO-G6	R-PDSO-G6
Number of components	2	2
Number of terminals	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz
Base Number Matches	1	1

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