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MT46H16M16LFBF-5 IT:H TR

Description
SDRAM - 移动 LPDDR 存储器 IC 256Mb(16M x 16) 并联 200 MHz 5 ns 60-VFBGA(8x9)
Categorysemiconductor    memory   
File Size3MB,96 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT46H16M16LFBF-5 IT:H TR Overview

SDRAM - 移动 LPDDR 存储器 IC 256Mb(16M x 16) 并联 200 MHz 5 ns 60-VFBGA(8x9)

MT46H16M16LFBF-5 IT:H TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR)
memory typeVolatile
memory formatDRAM
technologySDRAM - Mobile LPDDR
storage256Mb(16M x 16)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing60-VFBGA
Supplier device packaging60-VFBGA(8x9)
Clock frequency200 MHz
interview time5 ns
Basic product numberMT46H16M16
256Mb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H16M16LF – 4 Meg x 16 x 4 Banks
MT46H8M32LF – 2 Meg x 32 x 4 Banks
Features
V
DD
/V
DDQ
= 1.70–1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR) architec-
ture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data—one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 16
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
On-chip temp sensor to control self refresh rate
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh
Options
V
DD
/V
DDQ
1.8V/1.8V
Configuration
16 Meg x 16 (4 Meg x 16 x 4 banks)
8 Meg x 32 (2 Meg x 32 x 4 banks)
Row-size option
JEDEC-standard option
Reduced page-size option
2
Plastic "green" package
60-ball VFBGA (8mm x 9mm)
1
90-ball VFBGA (8mm x 13mm)
2
Timing – cycle time
5ns @ CL = 3 (200 MHz)
5.4ns @ CL = 3 (185 MHz)
6ns @ CL = 3 (166 MHz)
7.5ns @ CL = 3 (133 MHz)
Operating temperature range
Commercial (0˚ to +70˚C)
Industrial (–40˚C to +85˚C)
Design revision
Notes:
Marking
H
16M16
8M32
LF
LG
BF
B5
-5
-54
-6
-75
None
IT
:H
1. Only available for x16 configuration.
2. Only available for x32 configuration.
Table 1: Configuration Addressing
Reduced
Page-Size
Option
2
2 Meg x 32
x 4 banks
8K
8K A[12:0]
256 A[7:0]
Architecture 16 Meg x 16 8 Meg x 32
Configuration 4 Meg x 16 x 2 Meg x 32 x
4 banks
4 banks
Refresh count
Row
addressing
Column
addressing
8K
8K A[12:0]
512 A[8:0]
4K
4K A[11:0]
512 A[8:0]
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2008 Micron Technology, Inc. All rights reserved.
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