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MT48H4M16LFB4-8 IT

Description
SDRAM - 移动 LPSDR 存储器 IC 64Mb(4M x 16) 并联 125 MHz 6 ns 54-VFBGA(8x8)
Categorysemiconductor    memory   
File Size2MB,54 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT48H4M16LFB4-8 IT Overview

SDRAM - 移动 LPSDR 存储器 IC 64Mb(4M x 16) 并联 125 MHz 6 ns 54-VFBGA(8x8)

MT48H4M16LFB4-8 IT Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
Packagetray
memory typeVolatile
memory formatDRAM
technologySDRAM - Mobile LPSDR
storage64Mb(4M x 16)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.7V ~ 1.9V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing54-VFBGA
Supplier device packaging54-VFBGA(8x8)
Clock frequency125 MHz
interview time6 ns
Basic product numberMT48H4M16
64Mb: x16
MOBILE SDRAM
SYNCHRONOUS
DRAM
Features
• Temperature compensated self refresh (TCSR)
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes concurrent auto
precharge, and auto refresh modes
• Self refresh mode; standard and low power
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Low voltage power supply
• Partial array self refresh power-saving mode
• Deep power-down mode
• Programmable output drive strength
• Operating temperature ranges:
Extended (-25°C to +85°C)
Industrial (-40°C to +85°C)
OPTIONS
MARKING
H
4M16
F4
B4
-8
MT48H4M16LF - 1 MEG x 16 x 4 BANKS
Figure 1: 54-Ball FBGA Pin Assignment
(Top View)
1
A
B
C
D
E
F
G
H
J
V
SS
2
DQ15
3
V
SS
Q
4
5
6
7
V
DD
Q
8
DQ0
9
V
DD
DQ14
DQ13
V
DD
Q
V
SS
Q
DQ2
DQ1
DQ12
DQ11
V
SS
Q
V
DD
Q
DQ4
DQ3
DQ10
DQ9
V
DD
Q
V
SS
Q
DQ6
DQ5
DQ8
NC
V
SS
V
DD
LDQM
DQ7
UDQM
CLK
CKE
CAS#
RAS#
WE#
NC/A12
A11
A9
BA0
BA1
CS#
A8
A7
A6
A0
A1
A10
V
SS
A5
A4
A3
A2
V
DD
• V
DD
/V
DD
Q
1.8V/1.8V
• Configurations
4 Meg x 16 (1 Meg x 16 x 4 banks)
• Package/Ball out
54-ball FBGA, 8mm x 8mm (standard)
54-ball FBGA, 8mm x 8mm (lead-free)
• Timing (Cycle Time)
8ns @ CL = 3 (125 MHz)
9.6ns @ CL = 3 (104 MHz)
• Operating Temperature
Extended (-25°C to +85°C)
Industrial (-40°C to +85°C)
Top View
(Ball Down)
Table 1:
Address Table
4 MEG x 16
1 Meg x 16 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
256 (A0–A7)
-10
none
IT
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
Table 2:
FBGA Part Number System
Due to space limitations, FBGA-packaged compo-
nents have an abbreviated part marking that is differ-
ent from the part number. For a quick conversion of an
FBGA code, see the FBGA Part Marking Decoder on the
Micron web site,
www.micron.com/decoder.
Key Timing Parameters
ACCESS TIME
CL = 2
8ns
8ns
CL = 3
6ns
7ns
-
CL = CAS (READ) latency
SPEED
CLOCK
GRADE FREQUENCY
-8
-10
-8
-10
125 MHz
104 MHz
104 MHz
83 MHz
SETUP HOLD
TIME TIME
2.5ns
2.5ns
2.5ns
2.5ns
1ns
1ns
1ns
1ns
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_1.fm - Rev. E 11/04 EN
1
©2004 Micron Technology, Inc. All rights reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

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