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MT45W512KW16BEGB-708 WT TR

Description
PSRAM(伪 SRAM) 存储器 IC 8Mb(512K x 16) 并联 70 ns 54-VFBGA(6x8)
Categorysemiconductor    memory   
File Size2MB,58 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT45W512KW16BEGB-708 WT TR Overview

PSRAM(伪 SRAM) 存储器 IC 8Mb(512K x 16) 并联 70 ns 54-VFBGA(6x8)

MT45W512KW16BEGB-708 WT TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
Package卷带(TR)剪切带(CT)Digi-Reel®
memory typeVolatile
memory formatPSRAM
technologyPSRAM (pseudo-SRAM)
storage8Mb(512K x 16)
memory interfacein parallel
Write cycle time - words, pages70ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-30°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing54-VFBGA
Supplier device packaging54-VFBGA(6x8)
interview time70 ns
Basic product numberMT45W512KW16
8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory
Features
Async/Page/Burst
CellularRAM
®
1.0 Memory
MT45W512KW16BEGB
Features
• Single device supports asynchronous, page, and
burst operations
• Random access time: 70ns
• V
CC
, V
CC
Q voltages
1.7–1.95V V
CC
1.7–3.6V
1
V
CC
Q
• Page mode read access
16-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Burst mode write access: continuous burst
• Burst mode read access
4, 8, or 16 words or continuous burst
MAX clock rate: 104 MHz (
t
CLK = 9.62ns)
Burst initial latency: 38.5ns (4 clocks) at 104 MHz
t
ACLK: 7ns at 104 MHz
• Low power consumption
Asynchronous read: <20mA
Intrapage read: <15mA
Intrapage read initial access, burst read:
(38.5ns [4 clocks] at 104 MHz) <35mA
Continuous burst read: <28mA
Standby: <65µA
Deep power-down (DPD): <10µA (TYP at 25°C)
• Low-power features
Partial-array refresh (PAR)
DPD mode
Figure 1:
54-Ball VFBGA Ball Assignment
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
NC
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
NC
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
NC
WAIT
CLK
ADV#
NC
NC
NC
Top view
(Ball down)
Options
• Configuration
512K x 16
• Package
54-ball VFBGA (“green”)
• Access time
70ns
• Frequency
80 MHz
104 MHz
• Standby power
Standard
Designator
MT45W512KW16BE
GB
-70
8
1
None
Options (continued)
• Operating temperature range
Wireless (–30°C to +85°C)
1
Industrial (–40°C to +85°C)
2
Designator
WT
IT
Notes: 1. The 3.6V I/O and the –30°C wireless temper-
ature exceed the CellularRAM Workgroup 1.0
specification.
2. Contact factory for availability.
Part Number Example:
MT45W512KW16BEGB-701WT
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
PDF: 09005aef82e41987 / Source: 09005aef82e419a5
8mb_4mb_burst_cr1_0_p22z__1.fm - Rev. C 4/ 08 EN
Products and specifications discussed herein are subject to change by Micron without notice.

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