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PC28F00AP30BF0

Description
FLASH - NOR 存储器 IC 1Gb 并联 52 MHz 100 ns 64-EasyBGA(8x10)
Categorysemiconductor    memory   
File Size1MB,92 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

PC28F00AP30BF0 Overview

FLASH - NOR 存储器 IC 1Gb 并联 52 MHz 100 ns 64-EasyBGA(8x10)

PC28F00AP30BF0 Parametric

Parameter NameAttribute value
category
MakerMicron Technology
seriesAxcell™
Packagetray
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage1Gb
memory organization64M x 16
memory interfacein parallel
Clock frequency52 MHz
Write cycle time - words, pages100ns
interview time100 ns
Voltage - Power supply1.7V ~ 2V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing64-TBGA
Supplier device packaging64-EasyBGA(8x10)
Basic product numberPC28F00A
512Mb, 1Gb, 2Gb:
P30-65nm
Features
Micron Parallel NOR Flash Embedded
Memory (P30-65nm)
JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx,
PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx,
JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx,
PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,
RC28F00AP30BFx, RC28F00AP30TFx, PC28F00BP30EFx
Features
• High performance
• Easy BGA package features
– 100ns initial access for 512Mb, 1Gb Easy BGA
– 105ns initial access for 2Gb Easy BGA
– 25ns 16-word asynchronous page read mode
– 52 MHz (Easy BGA) with zero WAIT states and
17ns clock-to-data output synchronous burst
read mode
– 4-, 8-, 16-, and continuous word options for burst
mode
• TSOP package features
– 110ns initial access for 512Mb, 1Gb TSOP
• Both Easy BGA and TSOP package features
– Buffered enhanced factory programming (BEFP)
at 2 MB/s (TYP) using a 512-word buffer
– 1.8V buffered programming at 1.46 MB/s (TYP)
using a 512-word buffer
• Architecture
– MLC: highest density at lowest cost
– Symmetrically blocked architecture (512Mb, 1Gb,
2Gb)
– Asymmetrically blocked architecture (512Mb,
1Gb); four 32KB parameter blocks: top or bottom
configuration
– 128KB main blocks
– Blank check to verify an erased block
• Voltage and power
– V
CC
(core) voltage: 1.7–2.0V
– V
CCQ
(I/O) voltage: 1.7–3.6V
– Standby current: 70µA (TYP) for 512Mb; 75µA
(TYP) for 1Gb
– 52 MHz continuous synchronous read current:
21mA (TYP), 24mA (MAX)
• 16-bit wide data bus
• Security
– One-time programmable register: 64 OTP bits,
programmed with unique information from Mi-
cron; 2112 OTP bits available for customer pro-
gramming
– Absolute write protection: V
PP
= V
SS
– Power-transition erase/program lockout
– Individual zero-latency block locking
– Individual block lock-down
– Password access
• Software
– 25μs (TYP) program suspend
– 25μs (TYP) erase suspend
– Flash Data Integrator optimized
– Basic command set and extended function inter-
face (EFI) command set compatible
– Common flash interface
• Density and packaging
– 56-lead TSOP package (512Mb, 1Gb)
– 64-ball Easy BGA package (512Mb, 1Gb, 2Gb)
• Quality and reliability
– JESD47 compliant
– Operating temperature: –40°C to +85°C
– Minimum 100,000 ERASE cycles per block
– 65nm process technology
09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. D 5/17 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
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