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MT45W4MW16BCGB-701 WT TR

Description
PSRAM(伪 SRAM) 存储器 IC 64Mb(4M x 16) 并联 70 ns 54-VFBGA(6x8)
Categorysemiconductor    memory   
File Size2MB,69 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT45W4MW16BCGB-701 WT TR Overview

PSRAM(伪 SRAM) 存储器 IC 64Mb(4M x 16) 并联 70 ns 54-VFBGA(6x8)

MT45W4MW16BCGB-701 WT TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR)
memory typeVolatile
memory formatPSRAM
technologyPSRAM (pseudo-SRAM)
storage64Mb(4M x 16)
memory interfacein parallel
Write cycle time - words, pages70ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-30°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing54-VFBGA
Supplier device packaging54-VFBGA(6x8)
interview time70 ns
Basic product numberMT45W4MW16
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Features
Async/Page/Burst CellularRAM
®
1.5 Memory
MT45W4MW16BCGB
Features
• Single device supports asynchronous, page, and
burst operations
• V
CC
, V
CC
Q voltages:
1.7–1.95V V
CC
1.7–3.3V V
CC
Q
1
• Random access time: 70ns
• Burst mode READ and WRITE access
4, 8, 16, or 32 words or continuous burst
Burst wrap or sequential
MAX clock rate: 133 MHz
1
(
t
CLK = 7.5ns)
Burst initial latency: 37.5ns (5 clocks) at 133 MHz
t
ACLK: 5.5ns at 133 MHz
• Page mode read access
16-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Low power consumption
Asynchronous READ: <25mA
Intrapage READ: <15mA
Initial access, burst READ:
(37.5ns [5 clocks] at 133 MHz) <45mA
Continuous burst READ: <40mA
Standby: <50µA (TYP at 25 °C)
Deep power-down (DPD): <3µA (TYP)
• Low-power features
On-chip temperature-compensated refresh (TCR)
Partial-array refresh (PAR)
DPD mode
Figure 1:
54-Ball VFBGA Ball Assignment
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
RFU
RFU
RFU
Top view
(Ball down)
Options (continued)
• Standby power at 85°C
Standard: 140µA (MAX)
Low power: 120µA (MAX)
• Operating temperature range
Wireless (–30°C to +85°C)
Industrial (–40°C to +85°C)
Designator
None
L
WT
IT
Options
• Configuration:
4 Meg x 16
V
CC
core voltage supply:
1.7–1.95V
V
CC
Q I/O voltage supply:
1.7–3.3V
1
• Package
54-ball VFBGA (“green”)
• Access time
70ns
• Frequency: 133 MHz
104 MHz
80 MHz
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__1.fm - Rev. F 9/07 EN
Designator
MT45W4MW16BC
GB
-70
13
1
8
1
Notes: 1. The 3.3V I/O voltage and 133 MHz clock fre-
quency exceed the CellularRAM 1.5 Work-
group specification.
Part Number Example:
MT45W4MW16BCGB-701LWT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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