DRAM 存储器 IC 576Mb（32M x 18） 并联 300 MHz 20 ns 144-µBGA（18.5x11）
| Parameter Name | Attribute value |
| category | |
| Maker | Micron Technology |
| series | - |
| Package | Tape and Reel (TR) |
| memory type | Volatile |
| memory format | DRAM |
| technology | DRAM |
| storage | 576Mb（32M x 18） |
| memory interface | in parallel |
| Write cycle time - words, pages | - |
| Voltage - Power supply | 1.7V ~ 1.9V |
| Operating temperature | 0°C ~ 95°C（TC） |
| Installation type | surface mount type |
| Package/casing | 144-TFBGA |
| Supplier device packaging | 144-µBGA（18.5x11） |
| Clock frequency | 300 MHz |
| interview time | 20 ns |
| Basic product number | MT49H32M18 |
51mcu
Microcontroller MCU
PCB Design
Embedded System
Embedded System
FPGA/CPLD
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