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MT48H8M16LFB4-8 TR

Description
SDRAM - 移动 LPSDR 存储器 IC 128Mb(8M x 16) 并联 125 MHz 7 ns 54-VFBGA(8x8)
Categorysemiconductor    memory   
File Size3MB,63 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT48H8M16LFB4-8 TR Overview

SDRAM - 移动 LPSDR 存储器 IC 128Mb(8M x 16) 并联 125 MHz 7 ns 54-VFBGA(8x8)

MT48H8M16LFB4-8 TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR) Cut Tape (CT)
memory typeVolatile
memory formatDRAM
technologySDRAM - Mobile LPSDR
storage128Mb(8M x 16)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.7V ~ 1.9V
Operating temperature0°C ~ 70°C(TA)
Installation typesurface mount type
Package/casing54-VFBGA
Supplier device packaging54-VFBGA(8x8)
Clock frequency125 MHz
interview time7 ns
Basic product numberMT48H8M16
128Mb: x16 Mobile SDRAM
Features
Mobile SDRAM
MT48H8M16LF - 2 Meg x 16 x 4 banks
Features
• V
DD
/V
DD
Q = 1.70–1.95V
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, or 8
• Auto precharge and concurrent auto precharge
modes
• Auto refresh and self refresh mode
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Partial-array self refresh (PASR) power-saving mode
• Deep power-down mode
• Programmable output drive strength
• On-chip temperature sensor to control the self-
refresh rate
• Operating temperature ranges
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Figure 1:
54-Ball VFBGA Assignment
(Top View)
2
DQ15
1
A
B
C
D
E
F
G
H
J
V
SS
3
V
SS
Q
4
5
6
7
V
DD
Q
8
DQ0
9
V
DD
DQ14
DQ13
V
DD
Q
V
SS
Q
DQ2
DQ1
DQ12
DQ11
V
SS
Q
V
DD
Q
DQ4
DQ3
DQ10
DQ9
V
DD
Q
V
SS
Q
DQ6
DQ5
DQ8
DNU
V
SS
V
DD
LDQM
DQ7
UDQM
CLK
CKE
CAS#
RAS#
WE#
NC
A11
A9
BA0
BA1
CS#
A8
A7
A6
A0
A1
A10
V
SS
A5
A4
A3
A2
V
DD
Top View
(Ball Down)
Options
• V
DD
/V
DD
Q
1.8V/1.8V
• Configurations
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Package/Ball out
54-ball VFBGA, 8mm x 8mm
• Timing (cycle time)
7.5ns @ CL = 3 (133 MHz)
8ns @ CL = 3 (125 MHz)
• Operating temperature
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
• Die revision designator
Marking
H
8M16
B4
-75
-8
none
IT
:J
Table 1:
Address Table
8 Meg x 16
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
2 Meg x 16 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
Table 2:
Key Timing Parameters
CL = CAS (READ) latency
Clock
Frequency
CL = 2
104
MHz
83
MHz
CL = 3
133
MHz
125
MHz
Access Time
8ns
8ns
6ns
7ns
Speed
Grade
-75
-8
Setup Hold
CL = 2 CL = 3 Time Time
2.5ns
2.5ns
1ns
1ns
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_1.fm - Rev. C 2/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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