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BC557TA

Description
晶体管 - 双极 (BJT) - 单 PNP 45 V 100 mA 150MHz 500 mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size201KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BC557TA Overview

晶体管 - 双极 (BJT) - 单 PNP 45 V 100 mA 150MHz 500 mW 通孔 TO-92-3

BC557TA Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
Package带盒(TB)
Transistor typePNP
Vce saturation voltage drop (maximum value) when Ib and Ic are different650mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) (minimum value) when different Ic, Vce110 @ 2mA,5V
Frequency - Transition150MHz
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Current - Collector (Ic) (maximum)100 mA
Voltage - collector-emitter breakdown (maximum)45 V
Power - Max500 mW
Basic product numberBC557
DATA SHEET
www.onsemi.com
PNP Epitaxial Silicon
Transistor
BC556, BC557, BC558,
BC559, BC560
Features
TO−92−3
CASE 135AN
12
Straight Lead
Bulk Packing
3
Switching and Amplifier
High−Voltage: BC556, V
CEO
= −65 V
Low−Noise: BC559, BC560
Complement to BC546, BC547, BC548, BC549, and BC550
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TO−92−3
CASE 135AR
1
2
3
Bent Lead
Tape & Reel
Fan−Fold
1. Collector
2. Base
3. Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector - Base Voltage
BC556
BC557 / BC560
BC558 / BC559
Collector - Emitter Voltage
BC556
BC557 / BC560
BC558 / BC559
Emitter - Base Voltage
Collector Current (DC)
Peak Collector Current (Pulse)
Peak Base Current (Pulse)
Junction Temperature
Storage Temperature Range
V
EBO
I
C
I
CP
I
BP
T
J
T
STG
V
CEO
−65
−45
−30
−5
−100
−200
−200
150
−65 to +150
V
mA
mA
mA
°C
°C
A
= Assembly Location
BC5xxx = Specific Device Code
xxx
= 56A, 56B, 57A, 57B,
58B, 59B, 59C, 60C
Y
= Year
WW
= Work Week
Symbol
V
CBO
−80
−50
−30
V
Value
Unit
V
ABC
5xxx
YWW
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
THERMAL CHARACTERISTICS
(Note 1)
(T
A
= 25°C unless otherwise noted)
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Symbol
P
D
R
qJA
Max.
500
4.0
250
Unit
mW
mW/°C
°C/W
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
©
Semiconductor Components Industries, LLC, 2002
1
December, 2021 − Rev. 2
Publication Order Number:
BC556BTA/D

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