BCV26_L99Z datasheet, PDF - EEWORLD Datasheet

BCV26_L99Z: Description晶体管 - 双极 (BJT) - 单 PNP - 达林顿 30 V 1.2 A 220MHz 350 mW 表面贴装型 SOT-23-3; CategoryDiscrete semiconductor The transistor; File Size333KB，9 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BCV26_L99Z Overview

晶体管 - 双极 (BJT) - 单 PNP - 达林顿 30 V 1.2 A 220MHz 350 mW 表面贴装型 SOT-23-3

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	-
Package	Tape and Reel (TR)
Transistor type	PNP - Darlington
Vce saturation voltage drop (maximum value) when Ib and Ic are different	1V @ 100µA，100mA
Current - collector cutoff (maximum)	100nA（ICBO）
DC current gain (hFE) (minimum value) when different Ic, Vce	20000 @ 100mA，5V
Frequency - Transition	220MHz
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount type
Package/casing	TO-236-3，SC-59，SOT-23-3
Supplier device packaging	SOT-23-3
Current - Collector (Ic) (maximum)	1.2 A
Voltage - collector-emitter breakdown (maximum)	30 V
Power - Max	350 mW
Basic product number	BCV26

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