BC212_D74Z datasheet, PDF - EEWORLD Datasheet

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BC212_D74Z: Description晶体管 - 双极 (BJT) - 单 PNP 50 V 300 mA - 625 mW 通孔 TO-92-3; CategoryDiscrete semiconductor The transistor; File Size70KB，2 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC212_D74Z Overview

晶体管 - 双极 (BJT) - 单 PNP 50 V 300 mA - 625 mW 通孔 TO-92-3

BC212_D74Z Parametric

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	-
Package	带盒（TB）
Transistor type	PNP
Vce saturation voltage drop (maximum value) when Ib and Ic are different	600mV @ 5mA，100mA
Current - collector cutoff (maximum)	15nA（ICBO）
DC current gain (hFE) (minimum value) when different Ic, Vce	60 @ 2mA，5V
Frequency - Transition	-
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Package/casing	TO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packaging	TO-92-3
Current - Collector (Ic) (maximum)	300 mA
Voltage - collector-emitter breakdown (maximum)	50 V
Power - Max	625 mW
Basic product number	BC212

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BC212 — PNP General Purpose Amplifier

September 2007

BC212

PNP General Purpose Amplifier

• This device is designed for general purpose amplifier application at collector currents to 300mA.

• Sourced from process 68.

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

, T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Operating and Storage Junction Temperature Range

Parameter

Value

300

-55 ~ 150

Units

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJC

θJA

=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

625

5.0

83.3

200

Units

mW/°C

°C/W

*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

CBO

(sat)

(on)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Emitter Cut-off Current

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Output Capacitance

Test Condition

= 10μA

= 2mA

= 10μA

= 4V

= 30V

= 5V, I

= 10μA

= 5V, I

= 2mA

= 100 mA, I

= 5 mA

= 100 mA, I

= 5 mA

= 5V, I

= 2mA

= 10V, f = 1MHz

Min.

Typ.

Max.

Units

0.6

1.4

0.6

0.72

Notes:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3.These ratings are based on a maximum junction temperature of 150degrees C.

BC212 Rev. 1.0.0

www.fairchildsemi.com

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