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BAY71_T50R

Description
二极管 标准 50 V 200mA 通孔 DO-35
CategoryDiscrete semiconductor    diode   
File Size25KB,2 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BAY71_T50R Overview

二极管 标准 50 V 200mA 通孔 DO-35

BAY71_T50R Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageTape and Reel (TR)
Diode typestandard
Current - average rectification (Io)200mA
speedSmall signal =< 200mA (Io), any speed
Capacitance at different Vr, F2pF @ 0V,1MHz
Installation typeThrough hole
Package/casingDO-204AH, DO-35, axial
Supplier device packagingDO-35
Operating Temperature - Junction175°C (max)
Voltage - DC reverse (Vr) (maximum)50 V
Reverse recovery time (trr)4 ns
Voltage at different If - Forward (Vf)1 V @ 20 mA
Current at different Vr - reverse leakage100 nA @ 35 V
Basic product numberBAY71
BAY71 Small Signal Diode
December 2004
BAY71
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings *
T
Symbol
V
RRM
I
F(AV)
I
FSM
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
50
200
1.0
4.0
-65 to +200
175
Unit
V
mA
A
A
°C
°C
T
STG
T
J
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
C
= 25°C unless otherwise noted
Parameter
Value
500
300
Unit
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
I
R
= 5µA
I
F
= 0.1mA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 20mA
Conditions
Min.
50
0.48
0.57
0.69
0.76
Max
0.56
0.69
0.88
1.0
100
100
2
4
40
Units
V
V
V
V
V
nA
µA
pF
ns
ns
I
R
C
T
t
rr
t
fr
Reverse Leakage
Total Capacitance
Reverse Recovery Time
Forward Recovery Time
V
R
= 35V
V
R
= 35V, T
A
= 125°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA, I
rr
= 1.0mA,
R
L
= 100Ω
I
F
= 100mA
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BAY71 Rev. A

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