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FQA8N80C_F109

Description
通孔 N 通道 800 V 8.4A(Tc) 220W(Tc) TO-3P
CategoryDiscrete semiconductor    The transistor   
File Size793KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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通孔 N 通道 800 V 8.4A(Tc) 220W(Tc) TO-3P

FQA8N80C_F109 Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
seriesQFET®
PackagePipe fittings
FET typeN channel
technologyMOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)8.4A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
On-resistance (maximum value) at different Id and Vgs1.55 ohms @ 4.2A, 10V
Vgs(th) (maximum value) when different Id5V @ 250µA
Vgs (maximum value)±30V
FET function-
Power dissipation (maximum)220W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-3P
Package/casingTO-3P-3,SC-65-3
Drain-source voltage (Vdss)800 V
Gate charge (Qg) (maximum value) at different Vgs45 nC @ 10 V
Input capacitance (Ciss) (maximum value) at different Vds2050 pF @ 25 V
Basic product numberFQA8
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