FQA10N80_F109 datasheet, PDF - EEWORLD Datasheet

FQA10N80_F109: Description通孔 N 通道 800 V 9.8A（Tc） 240W（Tc） TO-3P; CategoryDiscrete semiconductor The transistor; File Size804KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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通孔 N 通道 800 V 9.8A（Tc） 240W（Tc） TO-3P

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	QFET®
Package	Pipe fittings
FET type	N channel
technology	MOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)	9.8A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
On-resistance (maximum value) at different Id and Vgs	1.05 ohms @ 4.9A, 10V
Vgs(th) (maximum value) when different Id	5V @ 250µA
Vgs (maximum value)	±30V
FET function	-
Power dissipation (maximum)	240W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-3P
Package/casing	TO-3P-3，SC-65-3
Drain-source voltage (Vdss)	800 V
Gate charge (Qg) (maximum value) at different Vgs	71 nC @ 10 V
Input capacitance (Ciss) (maximum value) at different Vds	2700 pF @ 25 V
Basic product number	FQA1

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