FQB70N10TM_AM002 datasheet, PDF

FQB70N10TM_AM002: Description表面贴装型 N 通道 100 V 57A（Tc） 3.75W（Ta），160W（Tc） D²PAK（TO-263AB）; CategoryDiscrete semiconductor The transistor; File Size647KB，9 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

Download Datasheet Parametric View All

FQB70N10TM_AM002 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	FQB70N10TM_AM002	-	-	View	Buy Now

表面贴装型 N 通道 100 V 57A（Tc） 3.75W（Ta），160W（Tc） D²PAK（TO-263AB）

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	QFET®
Package	Tape and Reel (TR)
FET type	N channel
technology	MOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)	57A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
On-resistance (maximum value) at different Id and Vgs	23 毫欧 @ 28.5A，10V
Vgs(th) (maximum value) when different Id	4V @ 250µA
Vgs (maximum value)	±25V
FET function	-
Power dissipation (maximum)	3.75W（Ta），160W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount type
Supplier device packaging	D²PAK（TO-263AB）
Package/casing	TO-263-3, D²Pak (2-lead + tab), TO-263AB
Drain-source voltage (Vdss)	100 V
Gate charge (Qg) (maximum value) at different Vgs	110 nC @ 10 V
Input capacitance (Ciss) (maximum value) at different Vds	3300 pF @ 25 V
Basic product number	FQB7

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components