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P1086_D74Z

Description
JFET P 通道 30 V 350 mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size24KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

P1086_D74Z Overview

JFET P 通道 30 V 350 mW 通孔 TO-92-3

P1086_D74Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageTape and Reel (TR)
FET typeP channel
Input capacitance (Ciss) (maximum value) at different Vds45pF @ 15V
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packagingTO-92-3
电压 - 击穿 (V(BR)GSS)30 V
电阻 - RDS(On)75 Ohms
Power - Max350 mW
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss)10 mA @ 20 V
不同 Id 时电压 - 截止 (VGS off)10 V @ 1 µA
Basic product numberP1086
P1086
P1086
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
TO-92
D S G
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
- 30
30
50
-55 ~ +150
Units
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
GSS
I
GSS
I
D
(off)
I
DGO
I
DSS
V
GS
(off)
V
DS
(on)
r
DS
(on)
r
ds
(on)
C
iss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
Parameter
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
Drain-Gate Leakage Current
Zero-Gate Voltage Drain Current
Gate-Source Cutoff Voltage
Drain-Source On Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Trun On Time
Rise Time
Trun Off Time
Fall Time
Test Condition
V
DS
= 0V, IG = 1µA
V
GS
= 15V
V
DS
= 15V
V
GS
= 12V
V
DG
= 15V
I
S
= 0
T = +85°C
T = +85°C
10
10
0.5
75
75
45
10
15
20
15
50
Min.
30
Typ.
Max.
2
10
0.5
2
0.1
Units
V
nA
nA
µA
N
A
µA
mA
V
V
pF
pF
ns
ns
ns
ns
V
DS
= 20V, V
GS
= 0V
V
DS
= 15V, I
D
= 1µA
V
GS
= 0V, I
D
= 6mA
V
GS
= 0V, I
D
= 1mA
V
GS
= 0V, I
D
= 0, f = 1kHz
V
DS
= 15V, V
GS
= 0V, f = 1MHz
V
DS
= 0V, V
GS
= 12V, f = 1MHz
V
DD
= -6V
V
GS
(off) = +12V
R
L
= 910Ω
I
D
(on) = 6mA
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002

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