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PN3638A_D75Z

Description
晶体管 - 双极 (BJT) - 单 PNP 25 V 800 mA - 625 mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size298KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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PN3638A_D75Z Overview

晶体管 - 双极 (BJT) - 单 PNP 25 V 800 mA - 625 mW 通孔 TO-92-3

PN3638A_D75Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
Package带盒(TB)
Transistor typePNP
Vce saturation voltage drop (maximum value) when Ib and Ic are different1V @ 30mA,300mA
Current - collector cutoff (maximum)35nA
DC current gain (hFE) (minimum value) when different Ic, Vce20 @ 300mA,2V
Frequency - Transition-
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Current - Collector (Ic) (maximum)800 mA
Voltage - collector-emitter breakdown (maximum)25 V
Power - Max625 mW
Basic product numberPN363
PN3638 / PN3638A
Discrete POWER & Signal
Technologies
PN3638
PN3638A
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
25
25
4.9
800
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN3638/A
625
5.0
83.3
200
Units
mW
mW/
°
C
°
C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

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