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PN5179_D27Z

Description
RF 晶体管 NPN 12V 50mA 2GHz 350mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size484KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

PN5179_D27Z Overview

RF 晶体管 NPN 12V 50mA 2GHz 350mW 通孔 TO-92-3

PN5179_D27Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageTape and Reel (TR)
Transistor typeNPN
Voltage - collector-emitter breakdown (maximum)12V
Frequency - Transition2GHz
Noise figure (dB, typical values ​​at different f)5dB @ 200MHz
Gain15dB
Power - Max350mW
DC current gain (hFE) (minimum value) when different Ic, Vce25 @ 3mA,1V
Current - Collector (Ic) (maximum)50mA
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Basic product numberPN517
MPS5179 / MMBT5179 / PN5179
MPS5179
MMBT5179
C
PN5179
E
C
B
TO-92
E
SOT-23
Mark: 3C
B
C
E
TO-92
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100
µA
to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
12
20
2.5
50
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
PN/MPS5179
350
2.8
357
*MMBT5179
225
1.8
556
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
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