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PN3640_D27Z

Description
晶体管 - 双极 (BJT) - 单 PNP 12 V 200 mA 500MHz 350 mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size326KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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PN3640_D27Z Overview

晶体管 - 双极 (BJT) - 单 PNP 12 V 200 mA 500MHz 350 mW 通孔 TO-92-3

PN3640_D27Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageTape and Reel (TR)
Transistor typePNP
Vce saturation voltage drop (maximum value) when Ib and Ic are different600mV @ 5mA,50mA
Current - collector cutoff (maximum)10nA
DC current gain (hFE) (minimum value) when different Ic, Vce30 @ 10mA,300mV
Frequency - Transition500MHz
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Current - Collector (Ic) (maximum)200 mA
Voltage - collector-emitter breakdown (maximum)12 V
Power - Max350 mW
Basic product numberPN364
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