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CNB13020R0LF

Description
反射 光学传感器 0.039"(1mm) PCB 安装
CategoryThe sensor    Optical sensors   
File Size87KB,7 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

CNB13020R0LF Overview

反射 光学传感器 0.039"(1mm) PCB 安装

CNB13020R0LF Parametric

Parameter NameAttribute value
category
MakerPanasonic
series-
PackageBulk
Sensing distance0.039"(1mm)
Sensing methodreflection
Output typePhototransistor
Response time20µs,20µs
Installation typeThrough hole
Package/casingPCB installation
Operating temperature-25°C ~ 85°C
Voltage - collector-emitter breakdown (maximum)30 V
Current - Collector (Ic) (maximum)20 mA
Current - DC Forward (If) (Maximum)50 mA
½品規格/Product
Specification
品種名/Type
Number:
2 7 −( F
ON 1 0 L )
松下統一品番/Matsushita
Unified Parts Number
: N 3 2 □0 F
C B1 0 0 L
*1
種別/Type
用途/Application
構造/Structure
接続/Connection
外½/Outline
絶対最大定格
Absolute Maximum
Ratings
反射型フォト
センサ/Photo
Reflector
Prepared
by
Checked
by
Approved
by
Sheet
1/7
Established
by
A.Nakano
K.Tanaka
K.Furuno
物½検知、
無接点スイッ
チ/Object
Detection½ Contactless SW.
G A 赤外発光ダイオード 非干渉性) S フォト ランジスタ
½½
・½
GaAs Infrared Light Emitting Diode(Non-Interference)½NPN Si Photo Transistor
附図/Attached
V
R
3
V
I
F
50
mA
P
D
75
mW
I
C
20
mA
V
CEO
30
V
V
ECO
5
V
P
C
50
mW
Topr
-25∼+85
Tstg
-30∼+100
電気的・
光学的特性/Electrical-Optical
Characteristics
項目/Item
略 号
Symbol
測定条件/Measuring
Condition
(Ta=25
℃±3 ℃)
Typ.
Min.
Limit
Max.
Unit
入力特性/Electrical
Characteristics - Input Diode
順電圧/Forward
Voltage
逆電流/Reverse
Current
端子間容量/Capacitance
V
F
I
R
Ct
I
F
=50 mA
V
R
=3 V
V
R
=0 V, f=1 MHz
1.3
0.01
30
1.5
10
V
μ
A
pF
出力特性/Electrical
Characteristics - Output Transistor
½レ½タ遮断電流/Collector
to Emitter Dark Current
½レ½タ出力電流/
Collector Current
暗電流/Dark
Current
応答時間/Switching
Time
½レ½タ½½ ミ½タ½和電圧/
Collector-Emitter Saturation
Voltage
I
CEO
V
CE
=10 V
200
nA
伝達特性/Electrical
Characteristics
Coupled
I
C
I
D
tr,tf
V
CE
(sat)
V
CC
=5 V, I
F
=10 mA, R
L
=100
Ω,
d=1 mm
(注 1)(Note1)
V
CC
=5 V, I
F
=10 mA, R
L
=100
Ω
V
CC
=5 V, I
C
=0.1 mA, R
L
=100
Ω
I
F
=20 mA, I
C
=0.1 mA
20
90
880
(注 2)(Note2)
200
0.4
μ
A
nA
μ
s
V
(注 1)(Note1)出力電流測定回路/Output Current measuring circuit
Al
蒸着面/Al
Vacuum Evaporation
d
ガラス板(d=1
mm)/Glass Board(d=1 mm)
I
F
I
C
R
L
V
CC
1987-04-14
Established
2005-10-28
Revised
Semiconductor Company, Matsushita Electric Industrial Co.,Ltd.
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