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U1898_D27Z

Description
JFET N 通道 40 V 625 mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size27KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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U1898_D27Z Overview

JFET N 通道 40 V 625 mW 通孔 TO-92-3

U1898_D27Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageTape and Reel (TR)
FET typeN channel
Input capacitance (Ciss) (maximum value) at different Vds16pF @ 20V
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
电压 - 击穿 (V(BR)GSS)40 V
电阻 - RDS(On)50 Ohms
Power - Max625 mW
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss)15 mA @ 20 V
不同 Id 时电压 - 截止 (VGS off)2 V @ 1 nA
Basic product numberU1898
U1898
U1898
N-Channel Switch
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabalized amplifiers.
• Sourced from Process 51.
• See J111 for characteristics.
TO-92
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
40
-40
50
-55 ~ 150
Units
V
V
mA
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GS
V
GS(off)
I
DGO
I
DSS
r
DS(on)
Small Signal Characteristics
r
ds(on)
C
iss
C
rss
t
on
t
off
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V
DS
= VGS = 0, f= 1.0 kHz
V
DS
= 20, V
GS
= 0, f = 1.0 MHz
V
GS
= - 20 V, f = 1.0 MHz
I
D(on)
= 6.0 mA
V
GS(off)
= 6.0 V
50
16
5.0
35
60
pF
pF
ns
ns
Parameter
Test Condition
I
G
= 1.0
µA,
V
DS
= 0
V
DS
= 20 V, I
D
= 1.0 nA
V
DG
= 20 V, I
S
= 0
V
DS
= 20 V, V
GS
= 0
I
D
= 1.0 mA, V
GS
= 0
15
50
Min.
-40
-2.0
-7.0
-200
Max.
Units
V
V
pA
mA
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Drain-Gate Leakage Current
Zero-Gate Voltage Drain Current *
On Characteristics
Switching Characteristics
* Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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