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TIS97_J35Z

Description
晶体管 - 双极 (BJT) - 单 NPN 40 V 500 mA - 625 mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size294KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

TIS97_J35Z Overview

晶体管 - 双极 (BJT) - 单 NPN 40 V 500 mA - 625 mW 通孔 TO-92-3

TIS97_J35Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageBulk
Transistor typeNPN
Vce saturation voltage drop (maximum value) when Ib and Ic are different-
Current - collector cutoff (maximum)10nA(ICBO)
DC current gain (hFE) (minimum value) when different Ic, Vce250 @ 100µA,5V
Frequency - Transition-
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Current - Collector (Ic) (maximum)500 mA
Voltage - collector-emitter breakdown (maximum)40 V
Power - Max625 mW
Basic product numberTIS97
TIS97
Discrete POWER & Signal
Technologies
TIS97
E
BC
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
6.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TIS97
625
5.0
83.3
200
Units
mW
mW/
°
C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation
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