FQA46N15_F109 datasheet, PDF - EEWORLD Datasheet

FQA46N15_F109: Description通孔 N 通道 150 V 50A（Tc） 250W（Tc） TO-3P; CategoryDiscrete semiconductor The transistor; File Size2MB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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FQA46N15_F109 Overview

通孔 N 通道 150 V 50A（Tc） 250W（Tc） TO-3P

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	QFET®
Package	Pipe fittings
FET type	N channel
technology	MOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)	50A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
On-resistance (maximum value) at different Id and Vgs	42 毫欧 @ 25A，10V
Vgs(th) (maximum value) when different Id	4V @ 250µA
Vgs (maximum value)	±25V
FET function	-
Power dissipation (maximum)	250W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-3P
Package/casing	TO-3P-3，SC-65-3
Drain-source voltage (Vdss)	150 V
Gate charge (Qg) (maximum value) at different Vgs	110 nC @ 10 V
Input capacitance (Ciss) (maximum value) at different Vds	3250 pF @ 25 V
Basic product number	FQA4

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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