FDC3512_F095 datasheet, PDF - EEWORLD Datasheet

FDC3512_F095: Description表面贴装型 N 通道 80 V 3A（Ta） 1.6W（Ta） SuperSOT™-6; CategoryDiscrete semiconductor The transistor; File Size282KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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表面贴装型 N 通道 80 V 3A（Ta） 1.6W（Ta） SuperSOT™-6

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	PowerTrench®
Package	Tape and Reel (TR)
FET type	N channel
technology	MOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)	3A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	6V，10V
On-resistance (maximum value) at different Id and Vgs	77 毫欧 @ 3A，10V
Vgs(th) (maximum value) when different Id	4V @ 250µA
Vgs (maximum value)	±20V
FET function	-
Power dissipation (maximum)	1.6W（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount type
Supplier device packaging	SuperSOT™-6
Package/casing	SOT-23-6 slim type, TSOT-23-6
Drain-source voltage (Vdss)	80 V
Gate charge (Qg) (maximum value) at different Vgs	18 nC @ 10 V
Input capacitance (Ciss) (maximum value) at different Vds	634 pF @ 40 V
Basic product number	FDC3512

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