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FDC697P

Description
表面贴装型 P 通道 20 V 8A(Ta) 2W(Ta) SuperSOT™-6 FLMP
CategoryDiscrete semiconductor    The transistor   
File Size159KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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表面贴装型 P 通道 20 V 8A(Ta) 2W(Ta) SuperSOT™-6 FLMP

FDC697P Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
seriesPowerTrench®
PackageTape and Reel (TR)
FET typeP channel
technologyMOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)8A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)1.8V,4.5V
On-resistance (maximum value) at different Id and Vgs20 毫欧 @ 8A,4.5V
Vgs(th) (maximum value) when different Id1.5V @ 250µA
Vgs (maximum value)±8V
FET function-
Power dissipation (maximum)2W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount type
Supplier device packagingSuperSOT™-6 FLMP
Package/casing6-SSOT Flat Lead, SuperSOT™-6 FLMP
Drain-source voltage (Vdss)20 V
Gate charge (Qg) (maximum value) at different Vgs55 nC @ 4.5 V
Input capacitance (Ciss) (maximum value) at different Vds3524 pF @ 10 V
Basic product numberFDC697
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