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BF244A_J35Z

Description
RF Mosfet N 通道 JFET 15 V 100MHz - - TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size23KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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RF Mosfet N 通道 JFET 15 V 100MHz - - TO-92-3

BF244A_J35Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageBulk
Transistor typeN-channel JFET
frequency100MHz
Gain-
Rated current (amps)50mA
Noise Figure1.5dB
Power - output-
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Voltage - Test15 V
Voltage - Rated30 V
Basic product numberBF244
BF245A/BF245B/BF245C
BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
P
D
T
J,
T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @T
A
=25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Parameter
Value
30
-30
10
350
2.8
- 55 ~ 150
Units
V
V
mA
mW
mW/°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
V
DS
= 0, I
G
= 1µA
V
DS
= 15V, I
D
= 200µA
Min.
-30
-0.4
-1.6
-3.2
-0.5
-2.2
-3.8
-7.5
-8
-5
Max.
Units
V
V
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
V
GS
Gate-Source
BF245A
BF245B
BF245C
V
GS
(off)
I
GSS
Gate-Source Cut-off Voltage
Gate Reverse Current
V
DS
= 15V, I
D
= 10nA
V
GS
= -20V, V
GS
= 0
V
nA
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
BF245A
BF245B
BF245C
On Characteristics
Common Source Forward
g
fs
Transconductance
V
GS
= 15V, V
GS
= 0
2
6
12
3
6.5
15
25
6.5
mA
V
GS
= 15V, V
GS
= 0, f = 1KHz
mmhos
©2003 Fairchild Semiconductor Corporation
Rev. A1, June 2003

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