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FCP36N60N / FCPF36N60NT — N-Channel SupreMOS
®
MOSFET
December 2013
FCP36N60N / FCPF36N60NT
N-Channel SupreMOS
®
MOSFET
600 V, 36 A, 90 mΩ
Features
• R
DS(on)
= 81 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 18 A
• Ultra Low Gate Charge (Typ. Q
g
= 86 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
The SupreMOS
®
MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
Application
• Solar Inverter
• AC-DC Power Supply
D
GD
S
TO-220
o
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
T
C
= 25 C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25
o
C)
- Derate Above 25 C
o
Parameter
FCP36N60N
FCPF36N60NT
600
±30
36*
22.7*
108*
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
- Continuous (T
C
= 25 C)
- Continuous (T
C
=
- Pulsed
o
36
22.7
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
312
2.6
-55 to +150
300
108
1800
12
3.12
100
20
100
o
C)
Single Pulsed Avalanche Energy
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
o
o
C
C
*Drain current limited by maximum junction temperature.
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