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FQI8N60CTU

Description
通孔 N 通道 600 V 7.5A(Tc) 3.13W(Ta),147W(Tc) I2PAK(TO-262)
CategoryDiscrete semiconductor    The transistor   
File Size881KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQI8N60CTU Overview

通孔 N 通道 600 V 7.5A(Tc) 3.13W(Ta),147W(Tc) I2PAK(TO-262)

FQI8N60CTU Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
seriesQFET®
PackagePipe fittings
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600 V
Current at 25°C - Continuous Drain (Id)7.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
On-resistance (maximum value) at different Id and Vgs1.2 ohms @ 3.75A, 10V
Vgs(th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) (maximum value) at different Vgs36 nC @ 10 V
Vgs (maximum value)±30V
Input capacitance (Ciss) (maximum value) at different Vds1255 pF @ 25 V
FET function-
Power dissipation (maximum)3.13W(Ta),147W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingI2PAK(TO-262)
Package/casingTO-262-3, long lead, I²Pak, TO-262AA
Basic product numberFQI8N60
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