BSR14_D87Z datasheet, PDF - EEWORLD Datasheet

BSR14_D87Z: Description晶体管 - 双极 (BJT) - 单 NPN 40 V 800 mA 300MHz 350 mW 表面贴装型 SOT-23-3; CategoryDiscrete semiconductor The transistor; File Size222KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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晶体管 - 双极 (BJT) - 单 NPN 40 V 800 mA 300MHz 350 mW 表面贴装型 SOT-23-3

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	-
Package	Tape and Reel (TR)
Transistor type	NPN
Vce saturation voltage drop (maximum value) when Ib and Ic are different	1V @ 50mA，500mA
Current - collector cutoff (maximum)	10nA（ICBO）
DC current gain (hFE) (minimum value) when different Ic, Vce	100 @ 150mA，10V
Frequency - Transition	300MHz
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount type
Package/casing	TO-236-3，SC-59，SOT-23-3
Supplier device packaging	SOT-23-3
Current - Collector (Ic) (maximum)	800 mA
Voltage - collector-emitter breakdown (maximum)	40 V
Power - Max	350 mW
Basic product number	BSR14

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