Photomicrosensor (Transmissive)
EE-SJ3 Series
Be sure to read
Precautions
on page 25.
■
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
0.3
Center mark
6.2
■
Features
•
High-resolution model with a 0.2-mm-wide sensing aperture, high-
sensitivity model with a 1-mm-wide sensing aperture, and model
with a horizontal sensing aperture are available.
■
Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
0.2
Symbol
I
FP
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
---
20 mA
100 mW (see note
1)
–25°C to 85°C
–30°C to 100°C
260°C
(see note 3)
Forward current
I
F
Pulse forward
current
Reverse voltage
V
R
10.2
7.2±0.2
Detector
Collector–Emit-
V
CEO
ter voltage
Emitter–Collec-
V
ECO
tor voltage
Collector cur-
rent
I
C
6
Four, 0.25
7.6±0.3
Cross section BB
2.54±0.2
Cross section AA
Four, 0.5
Collector dissi-
P
C
pation
Ambient tem-
perature
Operating
Storage
Topr
Tstg
Tsol
Model
Internal Circuit
K
C
Aperture (a x b)
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Soldering temperature
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Unless otherwise specified, the
tolerances are as shown below.
A
E
Dimensions
3 mm max.
3
<
mm
≤
6
6
<
mm
≤
10
10
<
mm
≤
18
18
<
mm
≤
30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10
μs
maximum with a frequency of
100 Hz.
3.
Complete soldering within 10 seconds.
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
■
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wave-
length
Detector
Light current
Dark current
Leakage current
Collector–Emitter satu-
rated voltage
Symbol
EE-SJ3-C
V
F
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
1.2 V typ., 1.5 V max.
0.01
μA
typ., 10
μA
max.
940 nm typ.
1 to 28 mA typ.
---
0.1 V typ.,
0.4 V max.
850 nm typ.
4
μs
typ.
4
μs
typ.
---
0.1 V typ.,
0.4 V max.
0.1 mA min.
0.5 to 14 mA
Value
EE-SJ3-D
EE-SJ3-G
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0
lx
---
I
F
= 20 mA,
I
L
= 0.1 mA
V
CE
= 10 V
V
CC
= 5 V,
R
L
= 100
Ω,
I
L
= 5 mA
Condition
2 nA typ., 200 nA max.
Peak spectral sensitivity
λ
P
wavelength
Rising time
Falling time
tr
tf
110
EE-SJ3 Series
Photomicrosensor (Transmissive)
■
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Collector dissipation P
C
(mW)
Forward current I
F
(mA)
I
F
P
C
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current I
F
(mA)
Light Current vs. Forward Current
Characteristics (Typical)
Light current I
L
(mA)
Ta = 25°C
V
CE
= 10 V
Ta =
−30°C
Ta = 25°C
Ta = 70°C
Ambient temperature Ta (°C)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SJ3-G)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current I
D
(nA)
V
CE
= 10 V
0
lx
Ta = 25°C
Light current I
L
(mA)
I
F
= 50 mA
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Collector−Emitter voltage V
CE
(V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Response time tr, tf (μs)
V
CC
= 5 V
Ta = 25°C
Sensing Position Characteristics
(EE-SJ3-D)
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Center of optical axis
Sensing Position Characteristics
(EE-SJ3-G)
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
−
0
+
d
Center of optical axis
Load resistance R
L
(kΩ)
Distance d (mm)
Distance d (mm)
Sensing Position Characteristics
(EE-SJ3-C)
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Center of optical axis
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
Distance d (mm)
EE-SJ3 Series
Photomicrosensor (Transmissive)
111
MCU
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