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FDS7064N

Description
表面贴装型 N 通道 30 V 16A(Ta) 3W(Ta) 8-SO
CategoryDiscrete semiconductor    The transistor   
File Size169KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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表面贴装型 N 通道 30 V 16A(Ta) 3W(Ta) 8-SO

FDS7064N Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
seriesPowerTrench®
Package卷带(TR)剪切带(CT)Digi-Reel®
FET typeN channel
technologyMOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)16A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4.5V
On-resistance (maximum value) at different Id and Vgs7.5 毫欧 @ 16A,4.5V
Vgs(th) (maximum value) when different Id2V @ 250µA
Vgs (maximum value)±12V
FET function-
Power dissipation (maximum)3W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount type
Supplier device packaging8-SO
Package/casing8-SOIC (0.154", 3.90mm wide)
Drain-source voltage (Vdss)30 V
Gate charge (Qg) (maximum value) at different Vgs48 nC @ 4.5 V
Input capacitance (Ciss) (maximum value) at different Vds3355 pF @ 15 V
Basic product numberFDS70

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Index Files: 335  440  2339  1534  1988  7  9  48  31  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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