RMLV0816BGSD-4S2#AA1 datasheet, PDF

RMLV0816BGSD-4S2#AA1: DescriptionSRAM 存储器 IC 8Mb（1M x 8，512K x 16）并联 45 ns 52-TSOP II; Categorysemiconductor memory; File Size343KB，16 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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RMLV0816BGSD-4S2#AA1 Overview

SRAM 存储器 IC 8Mb（1M x 8，512K x 16）并联 45 ns 52-TSOP II

Parameter Name	Attribute value
category
Maker	Renesas Electronics Corporation
series	-
Package	tray
memory type	Volatile
memory format	SRAM
technology	SRAM
storage	8Mb（1M x 8，512K x 16）
memory interface	in parallel
Write cycle time - words, pages	45ns
Voltage - Power supply	2.4V ~ 3.6V
Operating temperature	-40°C ~ 85°C（TA）
Installation type	surface mount type
Package/casing	52-TFSOP（0.350"，8.89mm 宽）
Supplier device packaging	52-TSOP II
interview time	45 ns
Basic product number	RMLV0816

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