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X28HC64P-12

Description
EEPROM 存储器 IC 64Kb(8K x 8) 并联 120 ns 28-PDIP
Categorysemiconductor    memory   
File Size783KB,18 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

X28HC64P-12 Overview

EEPROM 存储器 IC 64Kb(8K x 8) 并联 120 ns 28-PDIP

X28HC64P-12 Parametric

Parameter NameAttribute value
category
MakerRenesas Electronics Corporation
series-
PackagePipe fittings
memory typenon-volatile
memory formatEEPROM
technologyEEPROM
storage64Kb(8K x 8)
memory interfacein parallel
Write cycle time - words, pages5ms
Voltage - Power supply4.5V ~ 5.5V
Operating temperature0°C ~ 70°C(TA)
Installation typeThrough hole
Package/casing28-DIP(0.600",15.24mm)
Supplier device packaging28-PDIP
interview time120 ns
Basic product numberX28HC64
DATASHEET
X28HC64
64k, 8k x 8-Bit 5 Volt, Byte Alterable EEPROM
The
X28HC64
is an 8k x 8 EEPROM, fabricated with Intersil’s
proprietary, high performance, floating gate CMOS technology.
Like all Intersil programmable nonvolatile memories, the
X28HC64 is a 5V only device. It features the JEDEC approved
pinout for byte-wide memories, compatible with industry
standard RAMs.
The X28HC64 supports a 64-byte page write operation, effectively
providing a 32µs/byte write cycle, and enabling the entire
memory to be typically written in 0.25 seconds. The X28HC64
also features DATA Polling and Toggle Bit Polling, two methods
providing early end of write detection. In addition, the X28HC64
includes a user-optional software data protection mode that
further enhances Intersil’s hardware write protect capability.
Intersil EEPROMs are designed and tested for applications
requiring extended endurance. Inherent data retention is
greater than 100 years.
FN8109
Rev 4.00
June 27, 2016
Features
• 70ns access time
• Simple byte and page write
- Single 5V supply
- No external high voltages or V
P-P
control circuits
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- 40mA active current maximum
• 200µA standby current maximum
• Fast write cycle times
- 64-byte page write operation
- Byte or page write cycle: 2ms typical
- Complete memory rewrite: 0.25s typical
- Effective byte write cycle time: 32µs typical
• Software data protection
• End of write detection
- DATA polling
- Toggle bit
• High reliability
- Endurance: 100,000 cycles
- Data retention: 100 years
• JEDEC approved byte-wide pinout
• Pb-free available (RoHS compliant)
Pin Configurations
X28HC64
(28 LD PDIP, SOIC)
TOP VIEW
NC
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
X28HC64
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
NC
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
7
X28HC64
(32 LD PLCC)
TOP VIEW
V
CC
WE
A
12
NC
NC
NC
29
28
27
X28HC64
26
25
24
23
4 3
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
I/O
0
5
6
7
8
9
10
11
2 1 32 31 30
A
8
A
9
A
11
NC
OE
A
10
CE
I/O
7
I/O
6
22
12
21
13
14 15 16 17 18 19 20
I/O
1
I/O
2
V
SS
NC
I/O
3
I/O
4
I/O
5
FN8109 Rev 4.00
June 27, 2016
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