R1RW0408DGE-2PR#B0 datasheet, PDF

R1RW0408DGE-2PR#B0: DescriptionSRAM 存储器 IC 4Mb（512K x 8）并联 12 ns 36-SOJ; Categorysemiconductor memory; File Size135KB，16 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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R1RW0408DGE-2PR#B0 Overview

SRAM 存储器 IC 4Mb（512K x 8）并联 12 ns 36-SOJ

Parameter Name	Attribute value
category
Maker	Renesas Electronics Corporation
series	-
Package	Pipe fittings
memory type	Volatile
memory format	SRAM
technology	SRAM
storage	4Mb（512K x 8）
memory interface	in parallel
Write cycle time - words, pages	12ns
Voltage - Power supply	3V ~ 3.6V
Operating temperature	0°C ~ 70°C（TA）
Installation type	surface mount type
Package/casing	36-BSOJ (0.400", 10.16mm wide)
Supplier device packaging	36-SOJ
interview time	12 ns

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