TN6725A
Discrete Power & Signal
Technologies
TN6725A
CB
E
TO-226
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced
from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25°C unless otherwise noted
Value
50
60
12
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25°C unless otherwise noted
Max
Characteristic
TN6725A
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1
8
50
125
W
mW/°C
°C/W
°C/W
Units
©
1997 Fairchild Semiconductor Corporation
TN6725A, Rev A
TN6725A
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
T
A = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CES
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1 mA
I
C
= 100
µA
I
E
= 10
µA
V
CB
= 40 V
V
EB
= 10 V
50
60
12
100
100
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 200 mA, V
CE
= 5 V
I
C
= 500 mA, V
CE
= 5 V
I
C
= 1A, V
CE
= 5 V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 200 mA, I
B
= 2 mA
I
C
= 1 A, I
B
= 2 mA
V
BE(sat)
V
BE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 1 A, I
B
= 2 mA
I
C
= 1 A, V
CE
= 5.0 V
25,000
15,000
4000 40,000
1.0
1.5
2
2
-
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Output Capacitance
Small Signal Current Gain
V
CB
= 10 V, I
E
= 0, f = 1MHz
I
C
= 200 mA,V
CE
= 5 V, f=100MHz
1
10
10
pF
-
*Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
©
1997 Fairchild Semiconductor Corporation
TN6725A, Rev A
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not intended to be an exhaustive list of all such trademarks.
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Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
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®
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®
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®
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®
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
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failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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