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R1RP0408DGE-2PR#B0

Description
SRAM 存储器 IC 4Mb(512K x 8) 并联 36-SOJ
Categorysemiconductor    memory   
File Size135KB,16 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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R1RP0408DGE-2PR#B0 Overview

SRAM 存储器 IC 4Mb(512K x 8) 并联 36-SOJ

R1RP0408DGE-2PR#B0 Parametric

Parameter NameAttribute value
category
MakerRenesas Electronics Corporation
series-
PackagePipe fittings
memory typeVolatile
memory formatSRAM
technologySRAM
storage4Mb(512K x 8)
memory interfacein parallel
Write cycle time - words, pages12ns
Voltage - Power supply4.5V ~ 5.5V
Operating temperature0°C ~ 70°C(TA)
Installation typesurface mount type
Package/casing36-BSOJ (0.400", 10.16mm wide)
Supplier device packaging36-SOJ

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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