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R1RW0408DGE-2LR#B0

Description
SRAM 存储器 IC 4Mb(512K x 8) 并联 12 ns 36-SOJ
Categorysemiconductor    memory   
File Size135KB,16 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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R1RW0408DGE-2LR#B0 Overview

SRAM 存储器 IC 4Mb(512K x 8) 并联 12 ns 36-SOJ

R1RW0408DGE-2LR#B0 Parametric

Parameter NameAttribute value
category
MakerRenesas Electronics Corporation
series-
PackagePipe fittings
memory typeVolatile
memory formatSRAM
technologySRAM
storage4Mb(512K x 8)
memory interfacein parallel
Write cycle time - words, pages12ns
Voltage - Power supply3V ~ 3.6V
Operating temperature0°C ~ 70°C(TA)
Installation typesurface mount type
Package/casing36-BSOJ (0.400", 10.16mm wide)
Supplier device packaging36-SOJ
interview time12 ns
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