½ Watt, High Linearity InGaP HBT Amplifier
AH116
Product Features
•
800 – 1000 MHz
•
17.5 dB Gain @ 900 MHz
•
+28 dBm P1dB
•
+43 dBm Output IP3
•
+5V Single Positive Supply
•
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Product Description
The AH116 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance for various narrow-
band tuned application circuits with up to +43 dBm OIP3
and +28 dBm of compressed 1-dB power and is housed
in a lead-free/green/RoHS-compliant SOIC-8 package. All
devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH116 to maintain high linearity over temperature and
operate directly off a +5 V supply. This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
1
8
2
7
3
6
4
5
Applications
•
Final stage amplifiers for Repeaters
•
Mobile Infrastructure
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameters
Frequency Range
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR
Typical Performance
(1)
Min
15
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
Typ
900
17.5
18
7
+28.7
+43
+23
7
250
+5
Max
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Typical
900
17.5
-18
-7
+28.7
+43
+23
7
+5 V @ 250 mA
+27
+42
Noise Figure
Operating Current Range
(3)
Device Voltage
200
300
Noise Figure
Supply Bias
1. Test conditions unless otherwise noted: 25 ºC, +5V supply, 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature
Rating
-65 to +150
°C
+22 dBm
+8 V
400 mA
2W
62°C/W
+200°C
Ordering Information
Part No.
AH116-S8G
AH116-S8PCB900
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 500 pieces on a 7” reel
Specifications and information are subject to change without notice
Page 1 of 4
March 2008
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
½ Watt, High Linearity InGaP HBT Amplifier
AH116
Typical Device Data
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25
°C,
calibrated to device leads)
S11
0.8
S22
2.
0
6
0.
1.0
6
0.
30
DB(|S[2,1]|)
DB(GMax)
0.
4
0.8
Gain_Maximum Stable Gain
1.0
Swp Max
5.05GHz
Swp Max
5.05GHz
2.
0
0
3.
0
4.
0.2
Gain (dB)
10.0
10
-4
.0
-5.
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
15
0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Frequency (GHz)
0.8
0.9
1
.4
-0
.4
-0
.0
-2
-0
-0
.6
.6
-0.8
Swp Min
0.05GHz
-0.8
.0
-2
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments.
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
-2.72
-2.25
-2.31
-3.08
-5.79
-19.72
-6.06
24.16
20.33
17.23
15.63
15.58
15.22
11.91
133.35
124.95
119.37
98.28
69.70
25.60
-22.67
-36.72
-35.31
-34.90
-33.62
-32.10
-31.19
-33.26
-1.0
29.75
13.96
2.32
-16.36
-37.73
-78.95
-129.67
-2.23
-3.08
-3.32
-3.48
-2.87
-2.27
-1.40
-102.97
-137.03
-159.63
-172.70
-176.25
-179.74
173.15
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
Shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 2 of 4
March 2008
-1.0
-3
.0
-4
.0
-5.
0
5
.2
-0
2
-0.
Swp Min
0.05GHz
-10.0
-10.
0
-3
.0
0.2
20
5.0
10.0
0.
4
25
0
3.
0
4.
5 .0
10.0
½ Watt, High Linearity InGaP HBT Amplifier
AH116
900 MHz Application Circuit (AH116-S8PCB900)
Typical RF Performance at 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+17 dBm / tone, 1 MHz spacing)
900 MHz
17.5 dB
-18 dB
-7 dB
+28.7 dBm
+43 dBm
+23 dBm
7 dB
+5 V
250 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
S21 vs Frequency
20
18
S21 (dB)
S11 (dB)
S11 vs. Frequency
0
-5
-10
S22 (dB)
S22 vs. Frequency
0
-5
-10
-15
-20
-25
-30
940
-35
840
+25°C
+85°C
-40°C
860
880
900
920
940
16
14
12
10
840
+25°C
+85°C
-40°C
860
880
900
920
940
-15
-20
-25
-30
-35
840
860
880
900
+25°C
+85°C
-40°C
920
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
10
8
P1 dB (dBm)
NF (dB)
P1 dB vs. Frequency
30
28
26
24
22
20
840
+25°C
+85°C
-40°C
ACPR (dBm)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885KHz Meas BW, 900 MHz
6
4
2
0
840
+25°C
+80°C
-40°C
860
880
900
920
940
-40
-45
-50
-55
-60
-65
-70
-75
-80
18
19
20
21
22
Output Channel Power (dBm)
+25°C
+85°C
-40°C
23
24
860
880
900
920
940
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Frequency
+25°, +13 dBm / tone
OIP3 vs. Temperature
freq. = 900, 901 MHz, +13 dBm /tone
OIP3 vs. Output Power
freq. = 900, 901 MHz, +25°C
45
43
OIP3 (dBm)
45
43
OIP3 (dBm)
45
43
OIP3 (dBm)
41
39
37
35
840
41
39
37
35
41
39
37
860
880
900
920
940
35
-40
-15
10
35
Temperature (°C)
60
85
8
10
12
14
16
18
20
Frequency (MHz)
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 3 of 4
March 2008
½ Watt, High Linearity InGaP HBT Amplifier
AH116
AH116-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260
°C
reflow temperature) and lead (maximum 245
°C
reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an
“AH116G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“AH116-S8” or “ECP052G” designator
followed by an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260
°C
convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Mounting Configuration / Land Pattern
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 4 of 4
March 2008
京公网安备 11010802033920号
EEWORLD
