This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5F01
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC2F01 in SMini3 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
High transition frequency f
T
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini3-F2-B
Name
Pin
1. Base
2. Emitter
3. Collector
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
–55 to +150
C
ob
r
bb
' • C
C
C
rb
Pl
ea
Collector output capacitance
(Common base, input open circuited)
Collector-base parameter
Reverse transfer capacitance
(Common base)
Ma
Transition frequency
int
Collector-emitter saturation voltage
en
an
Forward current transfer ratio
*
ce
Collector-base cutoff current (Emitter open)
/D
isc
Emitter-base voltage (Collector open)
on
Collector-emitter voltage (Base open)
tin
V
CEO
I
CBO
h
FE
pla
ue
Parameter
Symbol
V
EBO
di
Electrical Characteristics
T
a
= 25°C±3°C
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Marking Symbol: C7
Rating
15
10
3
Unit
V
V
V
50
mA
°C
°C
150
150
mW
Conditions
Min
10
3
Typ
Max
1
75
220
0.5
1.9
1.2
12
0.6
0
No-rank
75 to 220
C7
Ver. AED
M
ain
Di
sc te
on na
tin nc
ue e/
d
Packaging
nc
Unit
V
V
mA
V
GHz
pF
ps
pF
I
C
= 2 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 10 V, I
E
= 0
V
CE
= 4 V, I
C
= 5 mA
V
CE
= 4 V, I
C
= 5 mA
V
CE(sat)
f
T
I
C
= 20 mA, I
B
= 4 mA
V
CB
= 4 V, I
E
= 0 , f = 1 MHz
V
CE
= 4 V, I
C
= 5 mA , f = 31.9 MHz
V
CE
= 4 V, I
C
= 0 , f = 1 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
Rank
h
FE
Marking Symbol
P
P
75 to 130
C7P
Q
Q
110 to 220
C7Q
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: November 2010
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
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