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ZC830A

Description
10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size17KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

ZC830A Overview

10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZC830A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio4.5
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage25 V
Maximum reverse current2e-8 µA
Reverse test voltage20 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
ZC830/A/B
to
ZC836/A/B
1
1
3
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
MAX
200
330
SOT23
UNIT
mA
mW
°C
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
PARAMETER
Reverse Breakdown
Voltage
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
SYMBOL
V
BR
I
R
MIN
25
0.2
0.03
10
0.04
TYP
MAX
UNIT CONDITIONS
V
nA
%/°C
I
R
=10
µ
A
V
R
=20V
V
R
=3V, f=1MHz
η
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
MIN
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
9.0
13.5
19.8
29.7
42.3
61.2
90.0
NOM
10.0
15.0
22.0
33.0
47.0
68.0
100.0
MAX
11.0
16.5
24.2
36.3
51.7
74.8
110.0
Minimum
Q
@ V
R
=3V
f=50MHz
300
300
200
200
200
100
100
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
4.5
4.5
5.0
5.0
5.0
5.0
5.0
MAX
6.0
6.0
6.5
6.5
6.5
6.5
6.5
Note:
No suffix
±
20% (e.g. ZC830), suffix B
±
5% (e.g. ZC830B)
Spice parameter data is available upon request for this device

ZC830A Related Products

ZC830A ZC830
Description 10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Minimum breakdown voltage 25 V 25 V
Configuration SINGLE SINGLE
Diode Capacitance Tolerance 10% 20%
Minimum diode capacitance ratio 4.5 4.5
Nominal diode capacitance 10 pF 10 pF
Diode component materials SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Maximum power dissipation 0.33 W 0.33 W
Certification status Not Qualified Not Qualified
minimum quality factor 300 300
Maximum repetitive peak reverse voltage 25 V 25 V
Maximum reverse current 2e-8 µA 2e-8 µA
Reverse test voltage 20 V 20 V
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
Varactor Diode Classification HYPERABRUPT HYPERABRUPT
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