IS62WV25616CLL
256K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC SRAM
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation
– 1.5 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 2.5V--3.6V V
DD
(62WV25616CLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• 2CS Option Available
ISSI
MARCH 2003
®
DESCRIPTION
The
ISSI
IS62WV25616CLL are high-speed, low power, 4M
bit SRAMs organized as 256K words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB)
and Lower Byte (LB)
access.
The IS62WV25616CLL are packaged in the JEDEC standard
48-pin mini BGA (6mm x 8mm). 48-pin mini BGA is
available both in 1CS and 2CS options.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/13/03
1
IS62WV25616CLL
PIN CONFIGURATIONS
48- ball mini BGA (6mm x 8mm)
(Package Code B)
1
2
3
4
5
6
ISSI
48-ball mini BGA (6mm x 8mm)
2 CS Option (Package Code B2)
1
2
3
4
5
6
®
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
V
DD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CSI
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
NC
I/O
0
I/O
2
V
DD
GND
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
V
DD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CS1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
CS2
I/O
0
I/O
2
V
DD
GND
I/O
6
I/O
7
NC
PIN DESCRIPTIONS
A0-A17
I/O0-I/O15
CS1,
CS2
OE
WE
LB
UB
NC
V
DD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/13/03
IS62WV25616CLL
TRUTH TABLE
Mode
Not Selected
WE
X
X
X
H
H
H
H
H
L
L
L
CS1
H
X
X
L
L
L
L
L
L
L
L
CS2
X
L
X
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
ISSI
V
DD
Current
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
®
Output Disabled
Read
Write
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
–0.3 to V
DD
+0.5
–0.2 to +4.2
–55 to +125
0.6
Unit
V
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
Operation Range (V
DD
)
Range
Commercial
Industrial
Ambient Temperature
0
o
C to +70
o
C
-40
o
C to +85
o
C
V
DD
2.5V - 3.6V
2.5V - 3.6V
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/13/03
3
IS62WV25616CLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -1 mA
I
OL
= 2.1 mA
V
DD
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
Min.
2.2
—
2.2
–0.2
–1
–1
ISSI
Max.
—
0.4
V
DD
+ 0.3
0.6
1
1
Unit
V
V
V
V
µA
µA
®
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
IS62WV25616CLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
CC
1
I
SB
1
Parameter
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
DD
= Max.,
Com.
I
OUT
= 0 mA, f = f
MAX
Ind.
V
DD
= Max.,
Com.
I
OUT
= 0 mA, f = 0
Ind.
V
DD
= Max.,
Com.
V
IN
= V
IH
or V
IL
Ind.
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
OR
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
Com.
CS1
≥
V
DD
– 0.2V,
Ind.
CS2
≤
0.2V,
typ
(1)
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
OR
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
Max.
55
50
55
2
3
0.6
0.8
Max.
70
45
50
2
3
0.6
0.8
Unit
mA
mA
mA
ULB Control
I
SB
2
CMOS Standby
Current (CMOS Inputs)
10
10
0.5
10
10
0.5
µA
ULB Control
Note:
1. Typical values are measured at V
DD
=3.0V, T
A
=25
o
C. Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/13/03